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this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change without notice. april 2014 docid023495 rev 3 1/19 STS8C6H3LL n-channel 30 v, 0.019 typ., 8 a, p-channel 30 v, 0.024 typ., 6 a stripfet? power mosfet in a so-8 package datasheet - preliminary data figure 1. internal schematic diagram features ? stripfet?v n-channel power mosfet ? stripfet?vi deepgate? p-channel power mosfet ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses applications ? switching applications description this device is a complementary pair transistor. the p-channel power mosfet is developed using stripfet?vi deepgate? and the n- channel using the stripfet? v technology. the resulting device exhibits low on-state resistance and an fom among the lowest in its voltage class. note: for the p-channel mosfet actual polarity of voltages and current has to be reversed. so-8 1 4 order code channel v ds r ds(on) max i d STS8C6H3LL n 30 v 0.021 ? 8 a p 0.030 ? 5 a table 1. device summary order code marking package packaging STS8C6H3LL 86dk3l so-8 tape and reel www.st.com
contents STS8C6H3LL 2/19 docid023495 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) for n-channel . . . . . . . . . . . . . . . . 6 2.2 electrical characteristics (curves) for p-channel . . . . . . . . . . . . . . . . 8 3 test circuits for n-channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 test circuits for p-channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 7 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
docid023495 rev 3 3/19 STS8C6H3LL electrical ratings 19 1 electrical ratings note: for the p-channel mosfet actual polarity of voltages and current has to be reversed table 2. absolute maximum ratings symbol parameter value unit n-channel p-channel v ds drain-source voltage (v gs = 0) 30 v v gs gate- source voltage 20 v i d drain current (continuous) at t c = 25c single operating 86a i d drain current (continuous) at t c = 100c single operating 53.7a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 32 24 a p tot total dissipation at t c = 25c 2.7 w t stg storage temperature -55 to 150 c t j operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-pcb (1) 1. when mounted on 1 inch2 fr-4 board, 2 oz. cu., t 10 sec thermal resistance junction-ambient single operation 47 c/w
electrical characteristics STS8C6H3LL 4/19 docid023495 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) note: for the p-channel mosfet actual polarity of voltages and current has to be reversed table 4. on/off states symbol parameter test conditions channel min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 n 30 v p i dss zero gate voltage drain current (v gs = 0) v ds = 30 v n 1a p v ds =30 v, t c =125 c n 10 a p i gss gate-body leakage current (v ds = 0) v gs = 20 v n 100 na p v gs(th) gate threshold voltage v ds = v gs , i d = 250 a n 1v p r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3 a n 0.019 0.021 ? p 0.024 0.030 ? v gs = 4.5 v, i d = 3 a n 0.023 0.028 ? p 0.038 0.050 ? table 5. dynamic symbol parameter test conditions channel min. typ. max. unit c iss input capacitance v ds = 24 v, f = 1 mhz, v gs = 0 n-475-pf p - 1450 - pf c oss output capacitance n-97-pf p-178-pf c rss reverse transfer capacitance n-19-pf p-120-pf q g total gate charge v dd =24 v, i d =6 a v gs = 4.5 v (see figure 25) n-4.6-nc p-12-nc q gs gate-source charge n-1.7-nc p-4.4-nc q gd gate-drain charge n-1.9-nc p-5-nc
docid023495 rev 3 5/19 STS8C6H3LL electrical characteristics 19 note: for the p-channel mosfet actual polarity of voltages and current has to be reversed table 6. switching times symbol parameter test conditions channel min. typ. max. unit t d(on) turn-on delay time v dd = 24 v, i d = 3 a r g =4.7 , v gs = 10 v figure 24 n-4-ns p-15-ns t r rise time n-22-ns p-15-ns t d(off) turn-off delay time n-13-ns p-24-ns t f fall time n-2.8-ns p-21-ns table 7. source drain diode symbol parameter test conditions channel min. typ. max. unit i sd source-drain current n- 8a p- 6a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) n- 32a p- 24a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 6a, v gs = 0 n- 1.1 v p- t rr reverse recovery time i sd = 5 a, di/dt = 100 a/s v dd =16 v, t j =150 c figure 26 n - 16.2 ns p-15 ns q rr reverse recovery charge n-8.1 nc p-6.5 nc i rrm reverse recovery current n-1 a p-0.9 a
electrical characteristics STS8C6H3LL 6/19 docid023495 rev 3 2.1 electrical characteristics (curves) for n-channel figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100ms 1s 10ms 0.01 tj=150c tc=25c sinlge pulse am03899v1 i d 30 20 10 0 0 2 v ds (v) 4 (a) 1 3 40 50 5v 6v v gs =10v 60 70 4v 3v am03900v1 i d 30 20 10 0 0 4 v gs (v) 8 (a) 2 6 40 50 v ds =5v 60 70 am03901v1 v (br)dss -55 -5 t j (c) (norm) -30 70 20 45 95 0.85 0.90 0.95 1.00 1.05 1.10 120 am03902v1 r ds(on) 15 10 5 0 0 15 i d (a) (m ) 10 20 20 25 30 35 i d =3a v gs =10v 5 25 am03903v1
docid023495 rev 3 7/19 STS8C6H3LL electrical characteristics 19 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 2 q g (nc) (v) 8 4 6 10 v dd =15v i d =6a 12 am03904v1 c 310 210 110 10 0 20 v ds (v) (pf) 10 410 ciss coss crss t j =25c f=1mhz 510 610 710 810 am03905v1 v gs(th) 0.7 0.6 0.5 0.4 -55 -5 t j (c) (norm) -30 0.8 70 20 45 95 120 145 0.9 1.0 1.1 am03906v1 r ds(on) 1.0 0.8 0.6 0.4 -55 -5 t j (c) (norm) -30 70 20 45 95 1.2 1.4 1.6 1.8 120 am03907v1 v sd 0 10 i sd (a) (v) 5 25 15 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =-55c t j =175c t j =25c 1.1 am03908v1
electrical characteristics STS8C6H3LL 8/19 docid023495 rev 3 2.2 electrical characteristics (curves) for p-channel figure 13. safe operating area figure 14. thermal impedance figure 15. output characteristics figure 16. transfer characteristics figure 17. gate charge vs gate-source voltage figure 18. static drain-source on-resistance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1s 100ms 0.01 tj=150c tc=25c single pulse am17929v1 single pulse =0.5 0.05 0.02 0.01 0.1 0.2 0.5 k 10 t p (s) -4 10 -3 10 -2 10 -1 10 -5 10 -3 10 -2 10 -1 10 0 amb a m b 10 1 am17945v1 i d 25 15 5 0 0 1 v ds (v) 2 (a) 3 2v 3v v gs =6, 7, 8, 9, 10v 10 20 30 4v 5v 35 40 am17931v1 i d 30 20 10 0 0 4 v gs (v) 7 (a) 2 6 5 15 25 35 v ds =2v 1 35 am17932v1 v gs 6 4 2 0 0 8 q g (nc) (v) 24 8 12 16 10 28 12 4 20 i d =6a am17933v1 r ds(on) 24.0 23.5 23.0 0 2 i d (a) (m ) 1 3 24.5 v gs =10v 4 5 6 am17934v1
docid023495 rev 3 9/19 STS8C6H3LL electrical characteristics 19 figure 19. capacitance variations figure 20. normalized gate threshold voltage vs temperature figure 21. normalized on-resistance vs temperature figure 22. normalized v (br)dss vs temperature figure 23. source-drain diode forward characteristics c 600 400 200 0 0 10 v ds (v) (pf) 5 15 ciss coss crss 20 25 800 1000 1200 1400 1600 am17935v1 v gs(th) 1 0.8 0.6 0.4 -50 0 t j (c) (norm) -25 1.2 75 25 50 100 i d =250a -75 125 150 am17936v1 1.2 r ds(on) t j (c) (norm) -50 0 -25 75 25 50 100 -75 125 150 1 0.8 0.6 0.4 1.6 1.4 am17937v1 i d =3a v (br)dss t j (c) (norm) 0.94 0.96 0.98 1 1.02 1.04 1.06 i d =1ma 1.08 -50 0 -25 75 25 50 100 -75 125 150 am17938v1 v sd 0 4 i sd (a) (v) 2 6 0.4 0.5 0.6 0.7 t j =-55c t j =175c t j =25c 0.8 0.9 1 am17939v1
test circuits for n-channel STS8C6H3LL 10/19 docid023495 rev 3 3 test circuits for n-channel figure 24. switching times test circuit for resistive load figure 25. gate charge test circuit figure 26. test circuit for inductive load switching and diode recovery times figure 27. unclamped inductive load test circuit figure 28. unclamped inductive waveform figure 29. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid023495 rev 3 11/19 STS8C6H3LL test circuits for p-channel 19 4 test circuits for p-channel figure 30. switching times test circuit for resistive load figure 31. gate charge test circuit figure 32. test circuit for diode recovery behavior am11255v1 am11256v1 am11257v1
package mechanical data STS8C6H3LL 12/19 docid023495 rev 3 5 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid023495 rev 3 13/19 STS8C6H3LL package mechanical data 19 figure 33. so-8 drawing 0016023_g_fu
package mechanical data STS8C6H3LL 14/19 docid023495 rev 3 table 8. so-8 mechanical data dim. mm min. typ. max. a 1.75 a1 0.10 0.25 a2 1.25 b0.31 0.51 b1 0.28 0.48 c0.10 0.25 c1 0.10 0.23 d4.804.905.00 e5.806.006.20 e1 3.80 3.90 4.00 e1.27 h0.25 0.50 l0.40 1.27 l1 1.04 l2 0.25 k0 8 ccc 0.10
docid023495 rev 3 15/19 STS8C6H3LL package mechanical data 19 figure 34. so-8 recommended footprint (a) a. all dimensions are in millimeters. footprint_0016023_g_fu
packaging mechanical data STS8C6H3LL 16/19 docid023495 rev 3 6 packaging mechanical data figure 35. so-8 tape and reel dimensions
docid023495 rev 3 17/19 STS8C6H3LL packaging mechanical data 19 table 9. so-8 tape and reel mechanical data dim. mm min. typ. max. a 330 c 12.8 13.2 d20.2 n60 t 22.4 ao 8.1 8.5 bo 5.5 5.9 ko 2.1 2.3 po 3.9 4.1 p7.9 8.1
revision history STS8C6H3LL 18/19 docid023495 rev 3 7 revision history table 10. revision history date revision changes 01-feb-2013 1 first revision. 03-apr-2014 2 ? modified: v gs (for p-channel) value in table 2 ? modified: p tot value in table 2 ? modified: r thj-pcb value in table 3 ? modified: q g typical value in table 5 ? added: section 2.1: electrical characteristics (curves) for n- channel and section 2.2: electrical characteristics (curves) for p- channel ? minor text changes 11-apr-2014 3 ? modified: marking in table 1 ? minor text changes
docid023495 rev 3 19/19 STS8C6H3LL 19 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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